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| NTE325 Silicon NPN RF Power Transistor 50W @ 30MHz Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency = 50% Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.53C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 V(BR)CES IC = 20mA, VBE = 0 Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Cob VCB = 15V, IE = 0, f = 1MHz - - 200 pF hFE IC = 1A, VCE = 5V 10 - - V(BR)CBO IC = 20mA, IE = 0 V(BR)EBO IE = 10mA, IC = 0 20 40 40 4 - - - - - - - - V V V V Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Functional Test Common-Emitter Amplifier Power Gain Collector Efficiency Series Equivalent Input Impedance Series Equivalent Output Imnpedance GPE Zin Zout VCC = 13.6V, POUT = 50W, IC(max) = 6.13A, f = 30MHz VCC = 13.6V, POUT = 50W, f = 30MHz 11 50 - - 15 - 1.56-j.89 174-j.50 - - - - dB % Symbol Test Conditions Min Typ Max Unit 1.040 (26.4) Max .520 (13.2) C .230 (5.84) E E B .100 (2.54) .385 (9.8) Dia .005 (0.15) .168 (4.27) 8-32-NC-3A .750 (19.05) Wrench Flat |
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